to-3p(h)is parameter symbol value unit collector-base voltage v cbo 1700 v collector-emitter voltage v ceo 600 v emitter-base voltage v ebo 5 v collector current i c 8.0 a collector peak current i c(peak) 16 a total dissipation at p tot 50 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c 2SD2553 description parameter symbol test conditions min. typ. max. unit collector cutoff current i cbo v cb =1700v, i e =0 1.0 ma emitter cut-off current i ebo v eb =4.0v, i c =0 66 200 ma emitter.base breakdown voltage v (br) ebo i c =10ma, i b =0 150 v dc current gain h fe(1) v ce =5.0v, i c =1.0a 8 28 h fe(2) v ce =5.0v, i c =6.0a 5 9 collector-emitter saturation voltage v ce(sat) i c =6.0a,i b =1.2a 5.0 v base-emitter saturation voltage v be(sat) i c =6.0a,i b =1.2a 0.9 1.2 v forward voltage (damper diode) v f i f =8.0a 1.6 2.0 v collector output capacitance c ob v cb =10v,f=1.0mhz, i e =0 155 pf transition frequency f t v ce =10v,i c =100ma 2.0 mhz storage time t stg i cp = 6.0 a, i b1 (end)=1.5 a f h = 15.75 khz 9 12 us silicon npn triple diffused mesa type product specification horizontal deflection output for high resolution display, color tv high speed switching applications electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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